SSP7461P -10 a, -60 v, r ds(on) 45 m ? p-channel enhancement mosfet elektronische bauelemente 29-jul-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc conv erters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8pp saves board space. ? fast switching speed. ? high performance trench technology. product summary product summary v ds (v) r ds (on) (m ? ? i d (a) -60 45@v gs = -10v -10 60@v gs = -4.5v -8 absolute maximum ratings and thermal data (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v continuous drain current a t a =25c i d -10 a t a =70c -8 pulsed drain current b i dm 50 a continuous source current (diode conduction) a i s -2.1 a power dissipation a t a =25c p d 5.0 w t a =70c 3.2 operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance data maximum junction to ambient a t Q 10 sec r ja 25 c / w steady-state 65 notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ? ? gate ??? ? source ???? ? drain ref. millimete r ref. millimete r min. max. min. max. a 1.00 1.10 0 12 b 5.70 5.80 b 0.33 0.51 c 0.20 0.30 d 1.27bsc d 3.61 3.98 e 1.35 1.75 e 5.40 6.10 g 1.10 - f 0.08 0.20 g 3.60 3.99 sop-8pp b e f g g a e b d c d
SSP7461P -10 a, -60 v, r ds(on) 45 m ? p-channel enhancement mosfet elektronische bauelemente 29-jul-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbo min typ max unit test conditions static gate-threshold voltage v gs(th) -1 - - v v ds = v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 25v zero gate voltage drain current i dss - - -1 a v ds = -48v, v gs = 0v - - -5 v ds = -48v, v gs = 0v, t j =55 c on-state drain current a i d(on) -50 - - a v ds = -5v, v gs = -10v drain-source on-resistance a r ds(on) - - 45 m ? v gs = -10v, i d = -9a - - 60 v gs = -4.5v, i d = -7.2a forward transconductance a g fs - 31 - s v ds = -15v, , i d = -9a diode forward voltage v sd - -0.7 - v i s = 2.1a, v gs = 0v dynamic b total gate charge q g - 15.3 - nc i d = -9a v ds = -15v v gs = -4.5v gate-source charge q gs - 5.2 - gate-drain charge q gd - 5.8 - turn-on delay time td (on) - 15 - ns i d = -1a, v dd = -15v v gen = -10v r l = 15 ? r g = 6 ? rise time t r - 12 - turn-off delay time td (off) - 62 - fall time t f - 46 - notes a. pulse test pw Q 300 us duty cycle Q 2%. b. guaranteed by design, not subject to production testing.
|
